Global solid state persistent storage and storage

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Dublin, January 10, 2022 (GLOBE NEWSWIRE) – The “Emerging Memories Take Off (2021)” report was added to ResearchAndMarkets.com to offer.

This report reviews technological developments in solid-state non-volatile memory and storage technologies and the implications for manufacturing and test equipment. These non-volatile memory / storage products affect the digital memory / storage hierarchy including DRAM, SRAM, NOR flash, NAND flash, and hard drives.

Current storage technologies, including flash memories (NAND and NOR), DRAM, and SRAM, are encountering potential technological limits as they are continuously improved. As a result, there are intensive efforts to develop new storage technologies. Most of these emerging technologies use non-volatile storage technologies and can be used for long term storage or to provide storage that does not lose information when no power is applied. This offers advantages for battery and environmental powered devices and also for energy savings in data centers.

The memories addressed in this report include PCM, RRAM, FRAM, MRAM, STT MRAM, and a variety of less common technologies such as carbon nanotubes. Based on the state of the art and the characteristics of these technologies, resistive RAM (RRAM) appears to be a potential replacement for flash memory. However, flash memory has several generations of technologies that are implemented before a replacement is required. Hence, this transition will not fully occur until the next decade at the earliest.

Micron and Intel Introduce 3D XPoint Memory, a high endurance technology that performs much better than NAND, if slightly slower than DRAM, and is more dense than DRAM; affects the need for DRAM. Intel introduced NVMe SSDs with its Optane technology (using 3D XPoint) in 2017 and started shipping DIMM Optane modules in 2019. 3D XPoint uses a kind of phase change technology.

Magnetic RAM (MRAM) and Spin Tunnel Torque RAM (STT MRAM) are starting to replace sNOR, SRAM, and possibly DRAM. The pace of development of STT MRAM and MRAM capabilities will lead to gradually lower prices, and the attractiveness of replacing volatile memories with high-speed, long-life non-volatile memories makes these technologies very competitive, provided that their volume increases to keep production costs up lower (and thus purchase prices).

Ferroelectric RAM (FRAM) and some RRAM technologies have some niche applications and the use of HfO FRAM could increase the number of niche markets available for FRAM.

Switching to non-volatile solid-state main memory and cache memory directly reduces power consumption and enables new energy-saving modes, enables faster recovery after being switched off and enables more stable computer architectures that retain their state even when switched off. Finally, spintronics technology, which uses spin instead of electricity for logical processes, could be used to make future microprocessors. Spin-based logic could enable very efficient in-memory processing.

The use of a non-volatile technology as embedded memory in combination with CMOS logic is of great importance in the electronics industry. As a replacement for a multi-transistor SRAM, the STT-MRAM could reduce the number of transistors and thus provide a cost-effective solution with a higher density. A number of corporate and consumer devices use MRAM as embedded cache memory, and all major foundries offer MRAM as embedded memory in SoC products.

The availability of STT MRAM has accelerated this trend and enables higher capacities. Due to the compatibility of MRAM and STT-RAM processes with conventional CMOS processes, these memories can be built directly on CMOS logic wafers or possibly built in during CMOS manufacture.

Key topics covered:

1. Summary

2. Introduction

3. Why emerging memories are popular

  • Scaling limits for established technologies
  • 3D nand flash technologies
  • Future flash memories
  • Challenges in scaling Embedded Nor and Sram
  • Standalone Nand and Dram scaling problems
  • Technical advantages
  • Alternatives to using emerging memories
  • Potential cost / GB benefits
  • The crucial importance of economies of scale
  • Which applications do emerging memories want first?

4. How a new tier of storage improves computer performance

  • How persistence changes the storage / storage hierarchy (storage class storage)
  • STT-MRAM
  • Reram
  • Changes in computer memory usage
  • Standardize the persistent memory software interface
  • In-memory computing opportunities
  • Less restrictions for MCU programmers

5. Understand bit selectors

6. Resistive Ram, Reram, Rram, Memristor

  • Reram device function
  • Symetrix ‘Ceram
  • Memristor from HP
  • Stacked Reram arrays
  • Reram Cmos integration
  • 3D Stacked Reram Crosspoint Specifications
  • 3D nand approach for Reram
  • Reram and artificial intelligence
  • Current Reram status

7. Ferroelectric RAM, FERAM, FRAM

  • Operation of FRAM
  • Properties of the Fram device
  • Ferroelectric field effect transistor RAM (Fefet)
  • 3D Fefet FRAM
  • Antiferroelectrics and Ferroelectric Tunnel Connections
  • The future of FRAM

8. Phase change memory (PCM)

  • Operation of PCM
  • advantages and disadvantages
  • PCM applications

9. Intel / Micron 3D crosspoint memory

10. MRAM (Magnetic RAM), STT MRAM (Spin Transfer Torque MRAM)

  • MRAM
  • STT-MRAM
  • This is how STT works
  • STT manufacturing
  • STT strengths & weaknesses
  • Spin orbit Torque MRAM
  • Meram, an alternative spin memory device
  • Circuit memory
  • MRAM in Artificial Intelligence

11. Other Emerging Storage Types

  • Carbon nanotubes (CNTS)
  • Polymeric Ferroelectric RAM (PFRAM)
  • III-V floating gate

12. Lithograph

  • Multiple sampling
  • Lithography of the future
  • Nano-imprinting lithography
  • Extreme UV (EUV) technology

13. 3D memory circuit design

  • Approaches to 3D memory circuits

14. Summary of Solid State Storage and Storage Technologies

15. Emerging memories and new materials

16. Emerging storage process equipment

  • MRAM AND STT MRAM process equipment
  • Physical vapor deposition
  • Ion beam and plasma etching
  • Photolithography (patterning)
  • Other process equipment
  • Device tests
  • MRAM and STT-MRAM consortia
  • Phase change manufacturing equipment

17. Storage drives semiconductor capital expenditures

18. Market forecasts for MRAM and 3D Xpoint memory

  • MRAM scenario estimates
  • 3D Xpoint Banded Estimates
  • Combined Emerging Memory Estimates

19. Estimates of the demand for MRAM capital goods

  • Ion beam etchers
  • Muster equipment
  • Magnetic glow equipment
  • Physical vapor deposition equipment
  • Test and other equipment
  • Summary of demand for MRAM devices

20. Company information

Storage and application companies

  • 4DS storage
  • Adesto technologies
  • Ambiq
  • Antaeus
  • POOR
  • Avalanche technology
  • BAE systems
  • Singing
  • Caes
  • Cao-Sip
  • Cea-Leti
  • Cerfe Labs
  • Cies
  • Cobham-Aeroflex
  • Crocus technology
  • Crossbar
  • cypress
  • Dialog semiconductors
  • Evaderis
  • Everspin
  • Ferroelectric memory manufacturer
  • Fujitsu Semiconductor
  • Gigadevice Semiconductor, Inc.
  • Globalfoundries
  • Grandis
  • Great
  • HPE
  • Honeywell
  • IBM
  • Imec
  • Institute of Microelectronics (Chinese Academy of Sciences)
  • Infineon
  • Integrated device technology (IDT)
  • Intel
  • Intermolecular
  • Intrinsically
  • Kioxia
  • knowledge
  • Lapis semiconductor
  • Leti
  • Microchip
  • Micron technology
  • Microsemi
  • Namlab
  • Nantero
  • NEC
  • Number
  • Nuvoton
  • NVE
  • NXP
  • Ovonyx
  • Panasonic
  • Qualcomm
  • Rambus
  • Ramtron
  • Trust store
  • Renesas Electronics
  • Rohm
  • Samsung Semiconductor
  • Sandisk
  • Seagate technology
  • SK Hynix
  • Sony Corporation
  • Spin ion
  • Spin memory
  • Spintec
  • STMicroelectronics
  • Symetrix
  • TDK
  • Texas Instruments
  • Thin film electronics
  • Unidym
  • Weebit Nano
  • Western Digital
  • Winbond

Semiconductor factories

  • DB Hitek
  • Globalfoundries
  • Silterra
  • Smic
  • Tower jazz
  • TSMC
  • UMC

Capital goods companies

  • Accretech
  • Anelva
  • Applied materials
  • ASM
  • ASML
  • Bruker
  • canon
  • Canon-Anelva
  • Capres A / S
  • EC systems
  • Hitachi high technology
  • Hprobe
  • Integral Solutions, Inc. (Isi)
  • Juung engineering
  • Keysight Technologies
  • Kla Tencor
  • lakeside
  • Lam research
  • Leuven instruments
  • Magoase
  • Microsense
  • Nanomagnetic instruments
  • Nanometry
  • Neoark
  • Nikon
  • To innovation
  • Oxford instruments
  • Plasma thermo
  • SHB
  • Singulus Technologies
  • Smart tip
  • Tokyo Electron
  • Tokyo Seimitsu
  • Ulvac
  • Veeco

Please visit https://www.researchandmarkets.com/r/q4krka for more information on this report



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